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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *High DC Current Gain: hFE= 500(Min.)@ IC= 5A APPLICATIONS *High voltage and high power switching applications. *Motor driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 600 400 5 15 2 150 UNIT .cn mi e V V V A A IC IB B Collector Current-Continuous Base Current Collector Power Dissipation @TC=25 Junction Temperature PC W Tj Tstg 150 Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 VECF COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS IC= 5A; L= 10mH IC= 10A; IB= 0.2A IC= 10A; IB= 0.2A VCB= 600V; IE= 0 VEB= 5V; IC= 0 MIN 400 TYP 2SD683 MAX UNIT V 2.0 2.5 0.5 30 500 30 V V mA mA Switching Times ton ts tf Turn-On Time Storage Time Fall Time w w w. .cn mi cse is IC= 5A; VCE= 5V IC= 15A; VCE= 5V IF= 10A VCB= 50V, IE= 0; ftest= 1MHz VCC=150V; IB1= -IB2= 0.1A 3.0 100 V pF 0.4 15 3.0 s s s isc Websitewww.iscsemi.cn |
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